 |  | | |
| PartNumber | BC848CE6327HTSA1 | BC848CE6327 | BC848CE6327 , SBRS5654T3 |
| Description | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 30 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 90 mV | - | - |
| Maximum DC Collector Current | 200 mA | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC848 | - | - |
| DC Current Gain hFE Max | 800 | - | - |
| Packaging | Reel | - | - |
| Brand | Infineon Technologies | - | - |
| Continuous Collector Current | 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 420 | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 848C BC BC848CE6327XT E6327 SP000010552 | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BC848CE6327HTSA1 | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | |
| BC848CE6433HTMA1 | TRANS NPN 30V 0.1A SOT-23 | ||
| BC848CE6327HTSA1 | TRANS NPN 30V 0.1A SOT-23 | ||
| BC848CE6327 | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon | ||
| BC848CE6327 , SBRS5654T3 | Nuevo y original | ||
| BC848CE6327XT | Nuevo y original | ||
| BC848CE6433 | Nuevo y original |