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| PartNumber | BAS116E6327HTSA1 | BAS116E6433HTMA1 | BAS116E6327XT |
| Description | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching |
| RoHS | Y | Y | - |
| Product | General Purpose Diodes | General Purpose Diodes | General Purpose Diodes |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Peak Reverse Voltage | 85 V | 85 V | 85 V |
| Max Surge Current | 4.5 A | 4.5 A | 4.5 A |
| If Forward Current | 250 mA | 250 mA | 250 mA |
| Configuration | Single | Single | Single |
| Recovery Time | 0.6 us | 0.6 us | 0.6 us |
| Vf Forward Voltage | 1250 mV | 1250 mV | 1250 mV |
| Ir Reverse Current | 80 nA | 80 nA | 80 nA |
| Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | BAS116 | BAS116 | - |
| Qualification | AEC-Q101 | - | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Pd Power Dissipation | 370 mW | 370 mW | 370 mW |
| Product Type | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching | Diodes - General Purpose, Power, Switching |
| Factory Pack Quantity | 3000 | 10000 | 3000 |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | Diodes & Rectifiers |
| Part # Aliases | 116 BAS BAS116E6327XT E6327 SP000010194 | 116 BAS BAS116E6433XT E6433 SP000010196 | 116 BAS BAS116E6327HTSA1 E6327 SP000010194 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| Height | - | - | 1 mm |
| Length | - | - | 2.9 mm |
| Termination Style | - | - | Solder Tail |
| Type | - | - | Standard Recovery Rectifiers |
| Width | - | - | 1.3 mm |
| Vr Reverse Voltage | - | - | 85 V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
BAS116E6327HTSA1 | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | |
| BAS116E6433HTMA1 | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | ||
| BAS116E6327XT | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | ||
| BAS116E6433HTMA1 | DIODE GEN PURP 80V 250MA SOT23-3 | ||
| BAS116E6327HTSA1 | DIODE GEN PURP 80V 250MA SOT23-3 | ||
| BAS116E | Nuevo y original | ||
| BAS116E6327 | Rectifier Diode, 1 Element, 0.25A, Silicon | ||
| BAS116E6327/SN | Diode Switching 85V 0.25A 3-Pin SOT-23 T/R (Alt: SP000010194) | ||
| BAS116E6327XT | Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode | ||
| BAS116E6433 | Rectifier Diode, 1 Element, Silicon |