PartNumber | AUIRLR3410TR | AUIRLR3410TRL | AUIRLR3410TRR |
Description | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms |
Manufacturer | Infineon | Infineon | IR |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
Id Continuous Drain Current | 17 A | 17 A | - |
Rds On Drain Source Resistance | 105 mOhms | 105 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 16 V | 16 V | - |
Qg Gate Charge | 34 nC | 34 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 79 W | 79 W | - |
Configuration | Single | Single | Single Quint Source |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | - |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | - |
Length | 6.5 mm | 6.5 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 7.7 S | 7.7 S | - |
Fall Time | 26 ns | 26 ns | 26 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 53 ns | 53 ns | 53 ns |
Factory Pack Quantity | 2000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 30 ns | 30 ns | 30 ns |
Typical Turn On Delay Time | 7.2 ns | 7.2 ns | 7.2 ns |
Part # Aliases | SP001519922 | SP001523020 | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 79 W |
Vgs Gate Source Voltage | - | - | 16 V |
Id Continuous Drain Current | - | - | 17 A |
Vds Drain Source Breakdown Voltage | - | - | 100 V |
Vgs th Gate Source Threshold Voltage | - | - | 2 V |
Rds On Drain Source Resistance | - | - | 105 mOhms |
Qg Gate Charge | - | - | 34 nC |
Forward Transconductance Min | - | - | 7.7 S |