AUIRLR024NT

AUIRLR024NTRL vs AUIRLR024NTR vs AUIRLR024NTRPBF

 
PartNumberAUIRLR024NTRLAUIRLR024NTRAUIRLR024NTRPBF
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 65mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
ManufacturerInfineonInternational Rectifier-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C- 55 C-
Pd Power Dissipation45 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon / IR--
Fall Time29 ns29 ns-
Product TypeMOSFET--
Rise Time74 ns74 ns-
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time7.1 ns7.1 ns-
Part # AliasesSP001517694--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-45 W-
Vgs Gate Source Voltage-16 V-
Id Continuous Drain Current-17 A-
Vds Drain Source Breakdown Voltage-55 V-
Rds On Drain Source Resistance-65 mOhms-
Qg Gate Charge-10 nC-
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
AUIRLR024NTRL MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
Infineon Technologies
Infineon Technologies
AUIRLR024NTRR RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
AUIRLR024NTRL RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
AUIRLR024NTR MOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
AUIRLR024NTRPBF Nuevo y original
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