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| PartNumber | AUIRFR9024NTRL | AUIRFR9024NTR | AUIRFR9024NTRPBF |
| Description | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 175 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Fall Time | 37 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 13 ns | - | - |
| Part # Aliases | SP001518586 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRFR9024NTRL | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | |
Infineon Technologies |
AUIRFR9024NTRR | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | |
| AUIRFR9024NTRL | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | ||
| AUIRFR9024NTR | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| AUIRFR9024NTRPBF | Nuevo y original |