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| PartNumber | AUIRFR5505 | AUIRFR5505TRL | AUIRFR5505TRR |
| Description | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms |
| Manufacturer | Infineon | Infineon | I |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 18 A | 18 A | - |
| Rds On Drain Source Resistance | 110 mOhms | 110 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 21.3 nC | 32 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Pd Power Dissipation | 57 W | 57 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Fall Time | 16 ns | 16 ns | 16 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 28 ns | 28 ns | 28 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 20 ns | 20 ns | 20 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
| Part # Aliases | SP001519564 | SP001519572 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 4 g |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Forward Transconductance Min | - | 4.2 S | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 57 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 3.1 A |
| Vds Drain Source Breakdown Voltage | - | - | - 55 V |
| Rds On Drain Source Resistance | - | - | 110 mOhms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRFR5505 | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | |
| AUIRFR5505TRL | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | ||
Infineon Technologies |
AUIRFR5505 | IGBT Transistors MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | |
| AUIRFR5505TRR | RF Bipolar Transistors MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | ||
| AUIRFR5505TRL | MOSFET P-CH 55V 18A DPAK | ||
| AUIRFR5505TR | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | ||
| AUIRFR5505TRPBF | Nuevo y original |