 | |  | |
| PartNumber | AUIRFR4615 | AUIRFR4615TRL | AUIRFR4615TR |
| Description | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | RF Bipolar Transistors MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 150 V | - |
| Id Continuous Drain Current | 33 A | 33 A | - |
| Rds On Drain Source Resistance | 42 mOhms | 42 mOhms | - |
| Qg Gate Charge | 26 nC | 26 nC | - |
| Pd Power Dissipation | 144 W | 144 W | - |
| Configuration | Single | Single | Single Quint Source |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Tube | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001522920 | SP001518604 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 5 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Channel Mode | - | Enhancement | Enhancement |
| Forward Transconductance Min | - | 35 S | - |
| Fall Time | - | 20 ns | 20 ns |
| Rise Time | - | 35 ns | 35 ns |
| Typical Turn Off Delay Time | - | 25 ns | 25 ns |
| Typical Turn On Delay Time | - | 15 ns | 15 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 144 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 33 A |
| Vds Drain Source Breakdown Voltage | - | - | 150 V |
| Vgs th Gate Source Threshold Voltage | - | - | 5 V |
| Rds On Drain Source Resistance | - | - | 42 mOhms |
| Qg Gate Charge | - | - | 26 nC |
| Forward Transconductance Min | - | - | 35 S |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRFR4615 | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | |
| AUIRFR4615TRL | MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | ||
| AUIRFR4615TRR | RF Bipolar Transistors MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | ||
| AUIRFR4615 | RF Bipolar Transistors MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | ||
| AUIRFR4615TRL | MOSFET N-CH 150V 33A DPAK | ||
| AUIRFR4615TR | RF Bipolar Transistors MOSFET AUTO 150V 1 N-CH HEXFET 42mOhms | ||
| AUIRFR4615TRPBF | Nuevo y original |