 | |  | |
| PartNumber | AUIRFR120Z | AUIRFR120ZTRL | AUIRFR120ZTRR |
| Description | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 8.7 A | 3.1 A | - |
| Rds On Drain Source Resistance | 190 mOhms | 190 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 6.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Pd Power Dissipation | 35 W | 35 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - | - |
| Packaging | Tube | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 23 ns | 23 ns | 23 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 26 ns | 26 ns | 26 ns |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 27 ns | 27 ns | 27 ns |
| Typical Turn On Delay Time | 8.3 ns | 8.3 ns | 8.3 ns |
| Part # Aliases | SP001516680 | SP001520338 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Maximum Operating Temperature | - | + 175 C | + 175 C |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 35 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 3.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Rds On Drain Source Resistance | - | - | 190 mOhms |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRFR120Z | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | |
| AUIRFR120Z | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | ||
| AUIRFR120ZTRL | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | ||
| AUIRFR120ZTRR | RF Bipolar Transistors MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | ||
Infineon Technologies |
AUIRFR120ZTRL | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | |
| AUIRFR120ZTR | MOSFET AUTO 100V 1 N-CH HEXFET 190mOhms | ||
| AUIRFR120ZTRPBF | Nuevo y original |