AUIRFP2

AUIRFP2907 vs AUIRFP2907Z vs AUIRFP2602

 
PartNumberAUIRFP2907AUIRFP2907ZAUIRFP2602
DescriptionMOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhmsDarlington Transistors MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhmsMOSFET N-CH 24V 180A TO-247AD
ManufacturerInfineonInternational RectifierInternational Rectifier
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleTransistors - FETs, MOSFETs - Single
RoHSY-Details
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3-TO-247AD-3
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage75 V-24 V
Id Continuous Drain Current209 A-380 A
Rds On Drain Source Resistance4.5 mOhms-1.25 mOhms
Vgs Gate Source Voltage20 V--
Qg Gate Charge410 nC--
Minimum Operating Temperature- 55 C- 55 C-
Pd Power Dissipation470 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
QualificationAEC-Q101--
PackagingTubeTubeTube
Height20.7 mm--
Length15.87 mm--
Transistor Type1 N-Channel1 N-Channel-
Width5.31 mm--
BrandInfineon Technologies-International Rectifier
Fall Time130 ns100 ns-
Product TypeMOSFET--
Rise Time190 ns140 ns-
Factory Pack Quantity400--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns97 ns-
Typical Turn On Delay Time23 ns19 ns-
Part # AliasesSP001516710--
Unit Weight1.340411 oz1.340411 oz0.229281 oz
Package Case-TO-247-3-
Pd Power Dissipation-310 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-170 A-
Vds Drain Source Breakdown Voltage-75 V-
Rds On Drain Source Resistance-4.5 mOhms-
Qg Gate Charge-180 nC-
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
AUIRFP2907 MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
Infineon Technologies
Infineon Technologies
AUIRFP2907 Darlington Transistors MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
AUIRFP2907Z Darlington Transistors MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
AUIRFP2602 MOSFET N-CH 24V 180A TO-247AD
AUIRFP2907,AUFP2907 Nuevo y original
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