 | | |
| PartNumber | AUIRF7342QTR | AUIRF7342Q |
| Description | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V |
| Id Continuous Drain Current | 3.4 A | 3.4 A |
| Rds On Drain Source Resistance | 105 mOhms | 105 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | - |
| Qg Gate Charge | 26 nC | 26 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 2 W | 2 W |
| Configuration | Dual | Dual |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 2 P-Channel | 2 P-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 3.3 S | - |
| Fall Time | 22 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | - |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 43 ns | - |
| Typical Turn On Delay Time | 14 ns | - |
| Part # Aliases | SP001517224 | SP001515748 |
| Unit Weight | 0.017870 oz | 0.019048 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF7342QTR | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | |
| AUIRF7342Q | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | ||
Infineon Technologies |
AUIRF7342Q | MOSFET 2P-CH 55V 3.4A 8SOIC | |
| AUIRF7342QTR | MOSFET 2P-CH 55V 3.4A 8SOIC | ||
| AUIRF7342QTRPBF | Nuevo y original | ||
| AUIRF7342QTR. | Nuevo y original |