AUIRF3710ZST

AUIRF3710ZSTRL vs AUIRF3710ZSTRLPBF vs AUIRF3710ZSTRR

 
PartNumberAUIRF3710ZSTRLAUIRF3710ZSTRLPBFAUIRF3710ZSTRR
DescriptionMOSFET AUTO 100V 1 N-CH HEXFET 18mOhmsAUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation160 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon / IR--
Fall Time56 ns-56 ns
Product TypeMOSFET--
Rise Time77 ns-77 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time41 ns-41 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesSP001519476--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--160 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--18 mOhms
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
AUIRF3710ZSTRL MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms
Infineon Technologies
Infineon Technologies
AUIRF3710ZSTRL IGBT Transistors MOSFET AUTO 100V 1 N-CH HEXFET 18mOhms
AUIRF3710ZSTRLPBF Nuevo y original
AUIRF3710ZSTRR AUTOMOTIVE MOSFET, 100V 59.000A AUTO D2PAK
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