AUIRF2805

AUIRF2805STRL vs AUIRF2805S vs AUIRF2805

 
PartNumberAUIRF2805STRLAUIRF2805SAUIRF2805
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTThrough Hole
Package / CaseTO-252-3TO-252-3TO-220-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V55 V
Id Continuous Drain Current135 A135 A175 A
Rds On Drain Source Resistance4.7 mOhms4.7 mOhms4.7 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge150 nC150 nC150 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Pd Power Dissipation200 W200 W330 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101AEC-Q101
PackagingReelTubeTube
Height2.3 mm2.3 mm15.65 mm
Length6.5 mm6.5 mm10 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm4.4 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time110 ns110 ns110 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time120 ns120 ns120 ns
Factory Pack Quantity80010001000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time68 ns68 ns68 ns
Typical Turn On Delay Time14 ns14 ns14 ns
Part # AliasesSP001519248SP001519486SP001517278
Unit Weight0.139332 oz0.139332 oz0.211644 oz
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
AUIRF2805STRL MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805S MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805 IGBT Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805S MOSFET N-CH 55V 135A D2PAK
Infineon Technologies
Infineon Technologies
AUIRF2805 MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805STRR RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805STRL RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms
AUIRF2805L Nuevo y original
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