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| PartNumber | AUIRF1010EZSTRL | AUIRF1010EZS |
| Description | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 44 A | 84 A |
| Rds On Drain Source Resistance | 8.5 mOhms | 8.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 140 W | 140 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Tube |
| Height | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Fall Time | 54 ns | 54 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 90 ns | 90 ns |
| Factory Pack Quantity | 800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 38 ns |
| Typical Turn On Delay Time | 19 ns | 19 ns |
| Part # Aliases | SP001520896 | SP001516450 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Qg Gate Charge | - | 58 nC |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRF1010EZSTRL | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | |
| AUIRF1010EZS | MOSFET N-CH 60V 75A D2PAK | ||
| AUIRF1010EZSTRL | MOSFET N-CH 60V 75A D2PAK | ||
Infineon / IR |
AUIRF1010EZS | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | |
| AUIRF1010EZSTRLPBF | Nuevo y original | ||
| AUIRF1010EZSTRR | AUTOMOTIVE MOSFET 60V, 84A, 8.5 MOHM, 58 NC QG, D2PAK | ||
| AUIRF1010EZSTRRPBF | Nuevo y original |