PartNumber | AUIRF1010EZSTRL | AUIRF1010EZ | AUIRF1010EZS |
Description | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | TO-263-3 | TO-220-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 44 A | 84 A | 84 A |
Rds On Drain Source Resistance | 8.5 mOhms | 8.5 mOhms | 8.5 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 140 W | 140 W | 140 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
Packaging | Reel | Tube | Tube |
Height | 4.4 mm | 15.65 mm | 4.4 mm |
Length | 10 mm | 10 mm | 10 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 4.4 mm | 9.25 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon / IR |
Fall Time | 54 ns | 54 ns | 54 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 90 ns | 90 ns | 90 ns |
Factory Pack Quantity | 800 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 38 ns | 38 ns | 38 ns |
Typical Turn On Delay Time | 19 ns | 19 ns | 19 ns |
Part # Aliases | SP001520896 | SP001519970 | SP001516450 |
Unit Weight | 0.139332 oz | 0.211644 oz | 0.139332 oz |
Qg Gate Charge | - | 58 nC | 58 nC |