ATP302

ATP302-TL-H vs ATP302 vs ATP302-TL

 
PartNumberATP302-TL-HATP302ATP302-TL
DescriptionMOSFET POWER MOSFET
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseATPAK-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current70 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge115 nC--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation70 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
SeriesATP302ATP302-
Transistor Type1 P-Channel1 P-Channel-
BrandON Semiconductor--
Fall Time500 ns--
Product TypeMOSFET--
Rise Time430 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time420 ns--
Typical Turn On Delay Time35 ns--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-70 W-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-70 A-
Vds Drain Source Breakdown Voltage-- 60 V-
Rds On Drain Source Resistance-13 mOhms-
Fabricante Parte # Descripción RFQ
ATP302-TL-H MOSFET POWER MOSFET
ATP302 Nuevo y original
ATP302-TL Nuevo y original
ATP302-TL-H-T1 Nuevo y original
ATP302D Nuevo y original
ON Semiconductor
ON Semiconductor
ATP302-TL-H RF Bipolar Transistors MOSFET POWER MOSFET
Top