ATP106

ATP106-TL-H vs ATP106 vs ATP106-TL

 
PartNumberATP106-TL-HATP106ATP106-TL
DescriptionMOSFET SWITCHING DEVICE
ManufacturerON SemiconductorSANYO-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseATPAK-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance41 mOhms--
Vgs Gate Source Voltage4.5 V--
Qg Gate Charge29 nC--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation40 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
SeriesATP106ATP106-
Transistor Type1 P-Channel1 P-Channel-
BrandON Semiconductor--
Fall Time90 ns--
Product TypeMOSFET--
Rise Time120 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-40 W-
Minimum Operating Temperature-- 55 C-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-30 A-
Vds Drain Source Breakdown Voltage-- 40 V-
Rds On Drain Source Resistance-25 mOhms-
Fabricante Parte # Descripción RFQ
ATP106-TL-H MOSFET SWITCHING DEVICE
ATP106 Nuevo y original
ATP106-TL Nuevo y original
ON Semiconductor
ON Semiconductor
ATP106-TL-H MOSFET P-CH 40V 30A ATPAK
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