PartNumber | ATF-58143-TR1G | ATF-58143-TR2G | ATF-58143-BLKG |
Description | RF JFET Transistors Transistor GaAs Single Voltage | RF JFET Transistors Transistor GaAs Single Voltage | RF JFET Transistors Transistor GaAs Single Voltage |
Manufacturer | Broadcom Limited | Broadcom Limited | AVAGO |
Product Category | RF JFET Transistors | RF JFET Transistors | RF FETs |
RoHS | Y | Y | - |
Transistor Type | EpHEMT | EpHEMT | EpHEMT |
Technology | GaAs | GaAs | GaAs |
Gain | 16.5 dB | 16.5 dB | 16.5 dB |
Vds Drain Source Breakdown Voltage | 5 V | 5 V | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - 5 V to 1 V | - |
Id Continuous Drain Current | 100 mA | 100 mA | - |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-343 | SOT-343 | - |
Packaging | Reel | Reel | Cut Tape |
Configuration | Single Dual Source | Single Dual Source | Single Dual Source |
Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
Product | RF JFET | RF JFET | - |
Type | GaAs EpHEMT | GaAs EpHEMT | - |
Brand | Broadcom / Avago | Broadcom / Avago | - |
Forward Transconductance Min | 410 mmho | 410 mmho | - |
NF Noise Figure | 0.5 dB | 0.5 dB | - |
P1dB Compression Point | 19 dBm | 19 dBm | - |
Product Type | RF JFET Transistors | RF JFET Transistors | - |
Factory Pack Quantity | 3000 | 10000 | - |
Subcategory | Transistors | Transistors | - |
Package Case | - | - | SOT-343 |
Pd Power Dissipation | - | - | 500 mW |
Id Continuous Drain Current | - | - | 100 mA |
Vds Drain Source Breakdown Voltage | - | - | 5 V |
Forward Transconductance Min | - | - | 410 mmho |
Vgs Gate Source Breakdown Voltage | - | - | - 5 V to 1 V |
NF Noise Figure | - | - | 0.5 dB |
P1dB Compression Point | - | - | 19 dBm |