ATF-58

ATF-58143-TR1G vs ATF-58143-TR2G vs ATF-58143-BLKG

 
PartNumberATF-58143-TR1GATF-58143-TR2GATF-58143-BLKG
DescriptionRF JFET Transistors Transistor GaAs Single VoltageRF JFET Transistors Transistor GaAs Single VoltageRF JFET Transistors Transistor GaAs Single Voltage
ManufacturerBroadcom LimitedBroadcom LimitedAVAGO
Product CategoryRF JFET TransistorsRF JFET TransistorsRF FETs
RoHSYY-
Transistor TypeEpHEMTEpHEMTEpHEMT
TechnologyGaAsGaAsGaAs
Gain16.5 dB16.5 dB16.5 dB
Vds Drain Source Breakdown Voltage5 V5 V-
Vgs Gate Source Breakdown Voltage- 5 V to 1 V- 5 V to 1 V-
Id Continuous Drain Current100 mA100 mA-
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation500 mW (1/2 W)500 mW (1/2 W)-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-343SOT-343-
PackagingReelReelCut Tape
ConfigurationSingle Dual SourceSingle Dual SourceSingle Dual Source
Operating Frequency2 GHz2 GHz2 GHz
ProductRF JFETRF JFET-
TypeGaAs EpHEMTGaAs EpHEMT-
BrandBroadcom / AvagoBroadcom / Avago-
Forward Transconductance Min410 mmho410 mmho-
NF Noise Figure0.5 dB0.5 dB-
P1dB Compression Point19 dBm19 dBm-
Product TypeRF JFET TransistorsRF JFET Transistors-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Package Case--SOT-343
Pd Power Dissipation--500 mW
Id Continuous Drain Current--100 mA
Vds Drain Source Breakdown Voltage--5 V
Forward Transconductance Min--410 mmho
Vgs Gate Source Breakdown Voltage--- 5 V to 1 V
NF Noise Figure--0.5 dB
P1dB Compression Point--19 dBm
Fabricante Parte # Descripción RFQ
Broadcom / Avago
Broadcom / Avago
ATF-58143-TR1G RF JFET Transistors Transistor GaAs Single Voltage
ATF-58143-TR2G RF JFET Transistors Transistor GaAs Single Voltage
ATF-58143-TR2G FET RF 5V 2GHZ SOT-343
ATF-58143-TR1G Nuevo y original
ATF-58143-BLKG RF JFET Transistors Transistor GaAs Single Voltage
ATF-58143-TR1 Nuevo y original
ATF-58143-TR1GG Nuevo y original
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