PartNumber | ATF-53189-BLK | ATF-53189-TR1 | ATF-53189-TR2 |
Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | IC PHEMT 2GHZ 4V 135MA SOT-89 |
Manufacturer | Broadcom Limited | AVAGO | - |
Product Category | RF JFET Transistors | RF FETs | - |
RoHS | Y | - | - |
Transistor Type | EpHEMT | EpHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 15.5 dB | 15.5 dB | - |
Vds Drain Source Breakdown Voltage | 7 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
Id Continuous Drain Current | 300 mA | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1 W | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-89 | - | - |
Packaging | Bulk | Reel | - |
Configuration | Single Dual Source | Single Dual Source | - |
Operating Frequency | 2 GHz | 2 GHz | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 650 mmho | - | - |
Moisture Sensitive | Yes | - | - |
NF Noise Figure | 0.85 dB | - | - |
P1dB Compression Point | 23 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.004603 oz | 0.004603 oz | - |
Package Case | - | SOT-89 | - |
Pd Power Dissipation | - | 1 W | - |
Id Continuous Drain Current | - | 300 mA | - |
Vds Drain Source Breakdown Voltage | - | 7 V | - |
Forward Transconductance Min | - | 650 mmho | - |
Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
NF Noise Figure | - | 0.85 dB | - |
P1dB Compression Point | - | 23 dBm | - |