PartNumber | ATF-35143-TR1G | ATF-35143-TR2G | ATF-35143-BLKG |
Description | RF JFET Transistors Transistor GaAs Low Noise | RF JFET Transistors Transistor GaAs Low Noise | RF JFET Transistors Transistor GaAs Low Noise |
Manufacturer | Broadcom Limited | Broadcom / Avago | AVAGO |
Product Category | RF JFET Transistors | Transistors - FETs, MOSFETs - Single | RF FETs |
RoHS | Y | - | - |
Transistor Type | pHEMT | pHEMT | pHEMT |
Technology | GaAs | GaAs | GaAs |
Gain | 18 dB | 18 dB | 18 dB |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 5.5 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V | - | - |
Id Continuous Drain Current | 80 mA | - | - |
Maximum Operating Temperature | + 160 C | + 160 C | + 160 C |
Pd Power Dissipation | 300 mW | - | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-343 | - | - |
Packaging | Reel | Reel | Bulk |
Configuration | Single Dual Source | Single Dual Source | Single Dual Source |
Operating Frequency | 2 GHz | 2 GHz | 2 GHz |
Product | RF JFET | - | - |
Type | GaAs pHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 120 mmho | - | - |
NF Noise Figure | 0.4 dB | - | - |
P1dB Compression Point | 11 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.001340 oz | - | - |
Package Case | - | SOT-343 | SOT-343 |
Pd Power Dissipation | - | 300 mW | 300 mW |
Id Continuous Drain Current | - | 80 mA | 80 mA |
Vds Drain Source Breakdown Voltage | - | 5.5 V | 5.5 V |
Forward Transconductance Min | - | 120 mmho | 120 mmho |
Vgs Gate Source Breakdown Voltage | - | - 5 V | - 5 V |
NF Noise Figure | - | 0.4 dB | 0.4 dB |
P1dB Compression Point | - | 11 dBm | 11 dBm |