AS4C16M32MS

AS4C16M32MS-6BINTR vs AS4C16M32MS-7BCN vs AS4C16M32MS-6BIN

 
PartNumberAS4C16M32MS-6BINTRAS4C16M32MS-7BCNAS4C16M32MS-6BIN
DescriptionDRAM 512M 1.8V 166MHz 16Mx16 LP MSDRDRAM 512M 1.8V 133MHz 16Mx16 LP MSDRIC DRAM 512M PARALLEL 90FBGA
ManufacturerAlliance MemoryAlliance Memory-
Product CategoryDRAMDRAM-
RoHSYY-
TypeSDRAM MobileSDRAM Mobile-
SeriesAS4C16M32MSAS4C16M32MS-
PackagingReelTray-
BrandAlliance MemoryAlliance Memory-
Moisture SensitiveYesYes-
Product TypeDRAMDRAM-
Factory Pack Quantity1000190-
SubcategoryMemory & Data StorageMemory & Data Storage-
Data Bus Width-32 bit-
Organization-16 M x 32-
Package / Case-FBGA-90-
Memory Size-512 Mbit-
Maximum Clock Frequency-133 MHz-
Access Time-5.4 ns-
Supply Voltage Max-1.95 V-
Supply Voltage Min-1.7 V-
Supply Current Max-45 mA-
Minimum Operating Temperature-- 25 C-
Maximum Operating Temperature-+ 85 C-
Mounting Style-SMD/SMT-
Fabricante Parte # Descripción RFQ
Alliance Memory
Alliance Memory
AS4C16M32MSA-6BINTR DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
AS4C16M32MSA-6BIN DRAM 512M 166MHz 16Mx32 Mobile LP SDRAM IT
AS4C16M32MS-6BINTR DRAM 512M 1.8V 166MHz 16Mx16 LP MSDR
AS4C16M32MS-7BCN DRAM 512M 1.8V 133MHz 16Mx16 LP MSDR
AS4C16M32MS-6BIN IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MS-6BINTR IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MS-7BCN IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MS-7BCNTR IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MSA-6BIN IC DRAM 512M PARALLEL 90FBGA
AS4C16M32MSA-6BINTR IC DRAM 512M PARALLEL 90FBGA
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