APTGT50SK17

APTGT50SK170T1G vs APTGT50SK170TG vs APTGT50SK170D1

 
PartNumberAPTGT50SK170T1GAPTGT50SK170TGAPTGT50SK170D1
DescriptionIGBT Modules CC8074IGBT Modules DOR CC4097
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT ModulesIGBT ModulesIGBTs - Modules
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max1.7 kV1.7 kV-
Collector Emitter Saturation Voltage2 V2 V-
Continuous Collector Current at 25 C75 A75 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation312 W312 W-
Package / CaseSP-1SP4-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 100 C-
PackagingTubeTube-
Height11.5 mm--
Length51.6 mm--
Operating Temperature Range- 40 C to + 150 C--
Width40.8 mm--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Unit Weight2.821917 oz3.880136 oz-
Series---
Package Case--D1
Mounting Type--Chassis Mount
Supplier Device Package--D1
Input--Standard
Power Max--310W
Current Collector Ic Max--70A
Voltage Collector Emitter Breakdown Max--1700V
Current Collector Cutoff Max--6mA
IGBT Type--Trench Field Stop
Vce on Max Vge Ic--2.4V @ 15V, 50A
Input Capacitance Cies Vce--4.4nF @ 25V
NTC Thermistor--No
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGT50SK170T1G IGBT Modules CC8074
APTGT50SK170TG IGBT Modules DOR CC4097
APTGT50SK170T1G IGBT Modules
APTGT50SK170D1 Nuevo y original
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