PartNumber | APTGT50SK170T1G | APTGT50SK120TG | APTGT50SK170TG |
Description | IGBT Modules CC8074 | IGBT Modules DOR CC4081 | IGBT Modules DOR CC4097 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 1.7 kV | 1.2 kV | 1.7 kV |
Collector Emitter Saturation Voltage | 2 V | 1.7 V | 2 V |
Continuous Collector Current at 25 C | 75 A | 75 A | 75 A |
Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
Pd Power Dissipation | 312 W | 277 W | 312 W |
Package / Case | SP-1 | SP4 | SP4 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 150 C | + 100 C | + 100 C |
Packaging | Tube | Tube | Tube |
Height | 11.5 mm | - | - |
Length | 51.6 mm | - | - |
Operating Temperature Range | - 40 C to + 150 C | - | - |
Width | 40.8 mm | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | 3.880136 oz | 3.880136 oz |