 | | | |
| PartNumber | APTGT200SK60T3AG | APTGT200SK120G | APTGT200SK170D3G |
| Description | IGBT Modules DOR CC3114 | IGBT Modules DOR CC6160 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 1.2 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.5 V | 1.7 V | 2 V |
| Continuous Collector Current at 25 C | 290 A | 280 A | 310 A |
| Gate Emitter Leakage Current | 400 nA | 500 nA | 400 nA |
| Pd Power Dissipation | 750 W | 890 W | 1.25 kW |
| Package / Case | SP3-32 | SP6 | D3-11 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 125 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | - | 3.880136 oz | - |
| Technology | - | - | Si |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT200SK60T3AG | IGBT Modules DOR CC3114 | |
| APTGT200SK120G | IGBT Modules DOR CC6160 | ||
| APTGT200SK170D3G | IGBT Modules Power Module - IGBT |