APTGT200A12

APTGT200A120G vs APTGT200A120D3G

 
PartNumberAPTGT200A120GAPTGT200A120D3G
DescriptionIGBT Modules CC6105IGBT Modules DOR CC7014
ManufacturerMicrochipMicrochip
Product CategoryIGBT ModulesIGBT Modules
RoHSYY
ProductIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationDualDual
Collector Emitter Voltage VCEO Max1.2 kV1.2 kV
Collector Emitter Saturation Voltage1.7 V1.7 V
Continuous Collector Current at 25 C280 A300 A
Gate Emitter Leakage Current500 nA400 nA
Pd Power Dissipation890 W1.05 kW
Package / CaseSP6D3-11
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 100 C+ 125 C
PackagingTubeBulk
BrandMicrochip / MicrosemiMicrochip / Microsemi
Mounting StyleChassis MountChassis Mount
Maximum Gate Emitter Voltage20 V20 V
Product TypeIGBT ModulesIGBT Modules
Factory Pack Quantity11
SubcategoryIGBTsIGBTs
Unit Weight3.880136 oz-
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGT200A120G IGBT Modules CC6105
APTGT200A120D3G IGBT Modules DOR CC7014
APTGT200A120D3G Trans IGBT Module N-CH 1.2KV 300A 7-Pin Case D3 - Boxed Product (Development Kits) (Alt: APTGT200A120D3G)
APTGT200A120G Trans IGBT Module N-CH 1.2KV 280A 7-Pin Case SP-6
APTGT200A120D3 Nuevo y original
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