 | | | |
| PartNumber | APTGT150TDU60PG | APTGT150TL60G | APTGT150TA60PG |
| Description | IGBT Modules DOR CC6514 | IGBT Modules DOR CC6188 | IGBT Modules DOR CC6507 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Triple Dual Common Source | - | 3-Phase |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 1.5 V |
| Continuous Collector Current at 25 C | 225 A | 200 A | 225 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 480 W | 480 W | 480 W |
| Package / Case | SP6-P | SP6 | SP6-P |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGT150TDU60PG | IGBT Modules DOR CC6514 | |
| APTGT150TL60G | IGBT Modules DOR CC6188 | ||
| APTGT150TA60PG | IGBT Modules DOR CC6507 |