APTGT150DA

APTGT150DA60T1G vs APTGT150DA170G vs APTGT150DA120D1

 
PartNumberAPTGT150DA60T1GAPTGT150DA170GAPTGT150DA120D1
DescriptionIGBT Modules CC8065IGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT ModulesIGBT ModulesIGBTs - Modules
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max600 V1.7 kV-
Collector Emitter Saturation Voltage1.5 V2 V-
Continuous Collector Current at 25 C225 A250 A-
Gate Emitter Leakage Current400 nA600 nA-
Pd Power Dissipation480 W890 W-
Package / CaseSP1-12SP6-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 100 C+ 100 C-
PackagingTube--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
Unit Weight2.821917 oz3.880136 oz-
Series---
Package Case--D1
Mounting Type--Chassis Mount
Supplier Device Package--D1
Input--Standard
Power Max--700W
Current Collector Ic Max--220A
Voltage Collector Emitter Breakdown Max--1200V
Current Collector Cutoff Max--4mA
IGBT Type--Trench Field Stop
Vce on Max Vge Ic--2.1V @ 15V, 150A
Input Capacitance Cies Vce--10.8nF @ 25V
NTC Thermistor--No
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGT150DA60T1G IGBT Modules CC8065
APTGT150DA170G IGBT Modules Power Module - IGBT
APTGT150DA60T1G Trans IGBT Module N-CH 600V 225A 480000mW 12-Pin Case SP-1 Tube
APTGT150DA120D1 Nuevo y original
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