 | |  | |
| PartNumber | APTGLQ50H65T3G | APTGLQ50DDA65T3G | APTGLQ50H65T1G |
| Description | IGBT Modules DOR CC3211 | IGBT Modules DOR CC3213 | IGBT Modules CC8128 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| Technology | - | - | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Quad | Dual | Quad |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 1.85 V |
| Continuous Collector Current at 25 C | 70 A | 70 A | 70 A |
| Gate Emitter Leakage Current | 150 nA | 150 nA | 150 nA |
| Pd Power Dissipation | 175 W | 175 W | 175 W |
| Package / Case | SP3F | SP3F | SP1 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Packaging | Tube | Tube | Tube |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 2.821917 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGLQ50H65T3G | IGBT Modules DOR CC3211 | |
| APTGLQ50VDA65T3G | IGBT Modules DOR CC3215 | ||
| APTGLQ50DDA65T3G | IGBT Modules DOR CC3213 | ||
| APTGLQ50H65T1G | IGBT Modules CC8128 | ||
| APTGLQ50TL65T3G | IGBT Modules DOR HOLD CC3212 |