 | | | |
| PartNumber | APTGF90DA60T1G | APTGF90DU60TG | APTGF90DH60T3G |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Single | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 2 V | 2 V | 2 V |
| Continuous Collector Current at 25 C | 110 A | 110 A | 110 A |
| Gate Emitter Leakage Current | 150 nA | 150 nA | 400 nA |
| Pd Power Dissipation | 416 W | 416 W | 416 W |
| Package / Case | SP1-12 | SP4 | SP3-32 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | 3.880136 oz | - |
| Technology | - | - | Si |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APTGF90DA60T1G | IGBT Modules Power Module - IGBT | |
| APTGF90DU60TG | IGBT Modules Power Module - IGBT | ||
| APTGF90DH60T3G | IGBT Modules Power Module - IGBT |