APTGF35

APTGF350A60G vs APTGF350DA60G vs APTGF350A60T6G

 
PartNumberAPTGF350A60GAPTGF350DA60GAPTGF350A60T6G
DescriptionIGBT Modules Power Module - IGBTPOWER IGBT TRANSISTORPOWER IGBT TRANSISTOR
ManufacturerMicrochip--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage2 V--
Continuous Collector Current at 25 C430 A--
Gate Emitter Leakage Current300 nA--
Pd Power Dissipation1.56 kW--
Package / CaseSP6--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 100 C--
BrandMicrochip / Microsemi--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity50--
SubcategoryIGBTs--
Unit Weight3.880136 oz--
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APTGF350DU60G IGBT Modules Power Module - IGBT
APTGF350A60G IGBT Modules Power Module - IGBT
APTGF350DA60G POWER IGBT TRANSISTOR
APTGF350A60T6G POWER IGBT TRANSISTOR
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