APTGF16

APTGF165DA60D1G vs APTGF165A60D1G vs APTGF165DA60D1

 
PartNumberAPTGF165DA60D1GAPTGF165A60D1GAPTGF165DA60D1
DescriptionIGBT Modules Power Module - IGBTIGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochipMicrosemi Corporation
Product CategoryIGBT ModulesIGBT ModulesIGBTs - Modules
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingleDualSingle
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage1.95 V1.95 V-
Continuous Collector Current at 25 C230 A230 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation781 W781 W-
Package / CaseD1-7D1-7-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 125 C-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
Technology-Si-
Series---
Package Case--D1
Mounting Type--Chassis Mount
Supplier Device Package--D1
Input--Standard
Power Max--730W
Current Collector Ic Max--230A
Voltage Collector Emitter Breakdown Max--600V
Current Collector Cutoff Max--500μA
IGBT Type--NPT
Vce on Max Vge Ic--2.5V @ 15V, 200A
Input Capacitance Cies Vce--9nF @ 25V
NTC Thermistor--No
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
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