| PartNumber | APT77N60JC3 | APT77N60SC6 | APT77N60BC6 |
| Description | Discrete Semiconductor Modules Power MOSFET - CoolMOS | MOSFET FG, MOSFET, 600V, TO-268 | MOSFET FG, MOSFET, 600V, TO-247 |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Discrete Semiconductor Modules | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Product | Power MOSFET Modules | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Mounting Style | Screw Mount | SMD/SMT | Through Hole |
| Package / Case | SOT-227-4 | D3PAK-3 | TO-247-3 |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Tube | Tube | Tube |
| Configuration | Single | Single | - |
| Height | 9.6 mm | - | 5.31 mm |
| Length | 38.2 mm | - | 21.46 mm |
| Width | 25.4 mm | - | 16.26 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Fall Time | 8 ns | 8 ns | 8 ns |
| Id Continuous Drain Current | 77 A | 77 A | 77 A |
| Pd Power Dissipation | 568 W | 481 W | 481 W |
| Product Type | Discrete Semiconductor Modules | MOSFET | MOSFET |
| Rds On Drain Source Resistance | 30 mOhms | 37 mOhms | 37 mOhms |
| Rise Time | 27 ns | 27 ns | 27 ns |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | Discrete Semiconductor Modules | MOSFETs | MOSFETs |
| Tradename | ISOTOP | - | - |
| Typical Turn Off Delay Time | 110 ns | 110 ns | 110 ns |
| Typical Turn On Delay Time | 18 ns | 18 ns | 18 ns |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 2.5 V | 3 V |
| Unit Weight | 1.058219 oz | 1.340411 oz | 1.340411 oz |
| Technology | - | Si | Si |
| Qg Gate Charge | - | 260 nC | 260 nC |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | - |