APT75GN120J

APT75GN120JDQ3 vs APT75GN120JDQ3G vs APT75GN120J

 
PartNumberAPT75GN120JDQ3APT75GN120JDQ3GAPT75GN120J
DescriptionIGBT Transistors FG, IGBT-COMBI, 1200V, 75A, SOT-227IGBT 1200V 124A 379W SOT227IGBT 1200V 124A 379W SOT227
ManufacturerMicrochip-Microsemi Corporation
Product CategoryIGBT Transistors-IGBTs - Modules
RoHSY--
TechnologySi--
Package / CaseSOT-227-4--
Mounting StyleSMD/SMT--
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C124 A--
Pd Power Dissipation379 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max124 A--
Height9.6 mm--
Length38.2 mm--
Operating Temperature Range- 55 C to + 150 C--
Width25.4 mm--
BrandMicrochip / Microsemi--
Continuous Collector Current124 A--
Gate Emitter Leakage Current600 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity1--
SubcategoryIGBTs--
Unit Weight1.058219 oz--
Series---
Package Case--ISOTOP
Mounting Type--Chassis Mount
Supplier Device Package--ISOTOPR
Input--Standard
Power Max--379W
Current Collector Ic Max--124A
Voltage Collector Emitter Breakdown Max--1200V
Current Collector Cutoff Max--100μA
IGBT Type--Trench Field Stop
Vce on Max Vge Ic--2.1V @ 15V, 75A
Input Capacitance Cies Vce--4.8nF @ 25V
NTC Thermistor--No
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APT75GN120JDQ3 IGBT Transistors FG, IGBT-COMBI, 1200V, 75A, SOT-227
APT75GN120JDQ3 IGBT Transistors
APT75GN120JDQ3G IGBT 1200V 124A 379W SOT227
APT75GN120J IGBT 1200V 124A 379W SOT227
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