APT40GR

APT40GR120B vs APT40GR120B2D30 vs APT40GR120B2SCD10

 
PartNumberAPT40GR120BAPT40GR120B2D30APT40GR120B2SCD10
DescriptionIGBT Transistors FG, IGBT, 1200V, 40A, TO-247IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAXIGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT TransistorsIGBT TransistorsIGBT Transistors
RoHSYYY
TechnologySiSiSi
PackagingTubeTubeTube
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Product TypeIGBT TransistorsIGBT TransistorsIGBT Transistors
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
Package / Case-TO-247-3-
Mounting Style-Through Hole-
Configuration-Single-
Collector Emitter Voltage VCEO Max-1.2 kV-
Collector Emitter Saturation Voltage-2.5 V-
Maximum Gate Emitter Voltage-30 V-
Continuous Collector Current at 25 C-88 A-
Pd Power Dissipation-500 W-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Continuous Collector Current Ic Max-88 A-
Height-5.31 mm-
Length-21.46 mm-
Operating Temperature Range-- 55 C to + 150 C-
Width-16.26 mm-
Continuous Collector Current-88 A-
Gate Emitter Leakage Current-250 nA-
Tradename-Ultra Fast NPT-IGBT-
Unit Weight-1.340411 oz-
Fabricante Parte # Descripción RFQ
Microchip / Microsemi
Microchip / Microsemi
APT40GR120B IGBT Transistors FG, IGBT, 1200V, 40A, TO-247
APT40GR120B2D30 IGBT Transistors FG, IGBT-COMBI, 1200V, 30A, TO-247 T-MAX
APT40GR120B2SCD10 IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
APT40GR120S IGBT Transistors FG, IGBT, 1200V, 40A, TO-268
APT40GR120B IGBT Transistors
APT40GR120B2D30 IGBT Transistors
APT40GR120S IGBT Transistors
APT40GR120B2SCD10 IGBT 1200V 88A 500W TO247
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