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| PartNumber | APT35GN120BG | APT35GN120L2DQ2G |
| Description | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS |
| Manufacturer | Microchip | Microchip |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-264MAX-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | 30 V | 30 V |
| Continuous Collector Current at 25 C | 94 A | 94 A |
| Pd Power Dissipation | 379 W | 379 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 94 A | 94 A |
| Height | 5.31 mm | 5.21 mm |
| Length | 21.46 mm | 26.49 mm |
| Operating Temperature Range | - 55 C to + 150 C | - 55 C to + 150 C |
| Width | 16.26 mm | 20.5 mm |
| Brand | Microchip / Microsemi | Microchip / Microsemi |
| Continuous Collector Current | 94 A | 94 A |
| Gate Emitter Leakage Current | 600 nA | 600 nA |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1 | 1 |
| Subcategory | IGBTs | IGBTs |
| Unit Weight | 1.340411 oz | 0.373904 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT35GN120BG | IGBT Transistors FG, IGBT, 1200V, TO-247, RoHS | |
| APT35GN120L2DQ2G | IGBT Transistors FG, IGBT-COMBI, 1200V, TO-264 MAX, RoHS | ||
| APT35GN120L2DQ2G | IGBT Transistors | ||
| APT35GN120BG | IGBT Transistors | ||
| APT35GN120L2DQ2 | Nuevo y original |