PartNumber | APT31M100L | APT31M100B2 |
Description | MOSFET FG, MOSFET, 1000V, TO-264 | MOSFET FG, MOSFET, 1000V, TO-247 T-MAX |
Manufacturer | Microchip | Microchip |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-264-3 | TO-247-3 |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1 kV |
Id Continuous Drain Current | 32 A | 32 A |
Rds On Drain Source Resistance | 380 mOhms | 340 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V |
Qg Gate Charge | 260 nC | 260 nC |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 1.04 kW | 1.04 kW |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Packaging | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi |
Forward Transconductance Min | 34 S | 34 S |
Fall Time | 33 ns | 33 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 35 ns | 35 ns |
Factory Pack Quantity | 1 | 1 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 130 ns | 130 ns |
Typical Turn On Delay Time | 39 ns | 39 ns |
Unit Weight | 0.352740 oz | 0.211644 oz |
Number of Channels | - | 1 Channel |
Transistor Type | - | 1 N-Channel |