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| PartNumber | APT27HZTR-G1 | APT27ZTR-G1 | APT27GA90BD15 |
| Description | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | IGBT Transistors |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-247-3 |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 450 V | 450 V | 900 V |
| Emitter Base Voltage VEBO | 9 V | 9 V | - |
| Collector Emitter Saturation Voltage | 500 mV | 500 mV | 2.5 V |
| Maximum DC Collector Current | 1.6 A | 1.6 A | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | APT27 | APT27 | - |
| DC Current Gain hFE Max | 40 at 100 mA, 10 V | 40 at 100 mA, 10 V | - |
| Packaging | Ammo Pack | Ammo Pack | Tube |
| Brand | Diodes Incorporated | Diodes Incorporated | Microchip / Microsemi |
| Continuous Collector Current | 0.8 A | 0.8 A | 48 A |
| DC Collector/Base Gain hfe Min | 6 at 300 mA, 10 V | 6 at 300 mA, 10 V | - |
| Pd Power Dissipation | 800 mW | 800 mW | 223 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | IGBT Transistors |
| Factory Pack Quantity | 2000 | 2000 | 1 |
| Subcategory | Transistors | Transistors | IGBTs |
| Unit Weight | 0.016000 oz | 0.016000 oz | 1.340411 oz |
| Technology | - | - | Si |
| Maximum Gate Emitter Voltage | - | - | 30 V |
| Continuous Collector Current at 25 C | - | - | 48 A |
| Continuous Collector Current Ic Max | - | - | 48 A |
| Height | - | - | 4.69 mm |
| Length | - | - | 20.8 mm |
| Operating Temperature Range | - | - | - 55 C to + 150 C |
| Width | - | - | 15.49 mm |
| Gate Emitter Leakage Current | - | - | 100 nA |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Diodes Incorporated |
APT27HZTR-G1 | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | |
| APT27ZTR-G1 | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | ||
Microchip / Microsemi |
APT27GA90BD15 | IGBT Transistors FG, IGBT-COMBI, 900V, TO-247 | |
| APT27GA90BD15 | IGBT 900V 48A 223W TO247 | ||
| APT27HZTR-G1 | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | ||
| APT27ZTR-G1 | Bipolar Transistors - BJT NPN 450Vceo 0.8A 0.8w 0.5mV 700Vces | ||
| APT27GA90K | Nuevo y original | ||
| APT27Z-G1 | Nuevo y original |