 | |  | |
| PartNumber | APT11GP60BDQBG | APT11GF120KR | APT11GF120KRG |
| Description | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi | ||
| Manufacturer | Microchip | APT | Microsemi Corporation |
| Product Category | IGBT Transistors | IGBTs - Single | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Packaging | Tube | - | Tube |
| Brand | Microchip / Microsemi | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | IGBTs | - | - |
| Series | - | - | - |
| Package Case | - | - | TO-220-3 |
| Input Type | - | - | Standard |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-220 [K] |
| Power Max | - | - | 156W |
| Reverse Recovery Time trr | - | - | - |
| Current Collector Ic Max | - | - | 25A |
| Voltage Collector Emitter Breakdown Max | - | - | 1200V |
| IGBT Type | - | - | NPT |
| Current Collector Pulsed Icm | - | - | 44A |
| Vce on Max Vge Ic | - | - | 3V @ 15V, 8A |
| Switching Energy | - | - | 300μJ (on), 285μJ (off) |
| Gate Charge | - | - | 65nC |
| Td on off 25°C | - | - | 7ns/100ns |
| Test Condition | - | - | 800V, 8A, 10 Ohm, 15V |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Microchip / Microsemi |
APT11GP60KG | IGBT Transistors | |
| APT11GP60BDQBG | IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi | ||
| APT11GF120KRG | Nuevo y original | ||
| APT11GF120KR | Nuevo y original |