PartNumber | APT100GN120JDQ4 | APT100GN120J | APT100GN120B2G |
Description | IGBT Modules FG, IGBT-COMBI, 600V, SOT-227 | IGBT Modules FG, IGBT, 1200V, 100A, SOT-227 | IGBT Transistors FG, IGBT, 1200V, TO-247 T-MAX, RoHS |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Transistors |
RoHS | Y | Y | Y |
Product | IGBT Silicon Carbide Modules | IGBT Silicon Modules | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | - |
Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | - |
Continuous Collector Current at 25 C | 153 A | 153 A | - |
Gate Emitter Leakage Current | 600 nA | 600 nA | - |
Pd Power Dissipation | 446 W | 446 W | - |
Package / Case | ISOTOP-4 | SOT-227-4 | TO-247-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | SMD/SMT | Chassis Mount | Through Hole |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Product Type | IGBT Modules | IGBT Modules | IGBT Transistors |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Height | - | 9.6 mm | - |
Length | - | 38.2 mm | - |
Operating Temperature Range | - | - 55 C to + 150 C | - |
Width | - | 25.4 mm | - |
Tradename | - | ISOTOP | - |
Unit Weight | - | 1.058219 oz | 1.340411 oz |
Technology | - | - | Si |