PartNumber | A2T23H200W23SR6 | A2T23H300-24SR6 | A2T23H160-24SR3 |
Description | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 51 W Avg., 28 V | RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR, 2300-2400 MHz, 69 W Avg., 28 V | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 28 W Avg., 28 V |
Manufacturer | NXP | NXP | NXP |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | Y | Y |
Transistor Polarity | Dual N-Channel | - | - |
Technology | Si | Si | Si |
Id Continuous Drain Current | 1.8 A | - | - |
Vds Drain Source Breakdown Voltage | - 500 mV, 65 V | - | - |
Gain | 15.5 dB | - | - |
Output Power | 51 W | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | ACP-1230S-4 | - | - |
Packaging | Reel | Reel | Reel |
Operating Frequency | 2300 MHz to 2400 MHz | - | - |
Type | RF Power MOSFET | - | - |
Brand | NXP Semiconductors | NXP / Freescale | NXP / Freescale |
Number of Channels | 2 Channel | - | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 150 | 150 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs Gate Source Voltage | - 6 V, 10 V | - | - |
Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
Part # Aliases | 935347117128 | 935322359128 | 935326016128 |
Unit Weight | 0 oz | 0.303504 oz | 0.164793 oz |