 | |  | |
| PartNumber | A2I20H060NR1 | A2I20H080GNR1 | A2I20H060GNR1 |
| Description | RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP | RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF Amplifier | RF Amplifier | RF Amplifier |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-270WB-15 | TO-270WB-15 | TO-270WBG-15 |
| Type | RF LDMOS Wideband Integrated Power Amplifier | RF LDMOS Wideband Integrated Power Amplifier | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Frequency | 1.8 GHz to 2.2 GHz | 1.8 GHz to 2.2 GHz | 1.8 GHz to 2.2 GHz |
| P1dB Compression Point | 48 dBm | 48.5 dBm | 48 dBm |
| Gain | 28.9 dB | 27.8 dB | 28.9 dB |
| Operating Supply Voltage | 28 V | 30 V | 28 V |
| Test Frequency | 1.8425 GHz | 1.88 GHz | 1.8425 GHz |
| Operating Supply Current | 145 mA | 195 mA | 145 mA |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Packaging | Reel | Reel | Reel |
| Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF Amplifier | RF Amplifier | RF Amplifier |
| Factory Pack Quantity | 500 | 500 | 500 |
| Subcategory | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits | Wireless & RF Integrated Circuits |
| Part # Aliases | 935318716528 | 935313345528 | 935316306528 |
| Unit Weight | 0.058073 oz | 0.056385 oz | 0.056385 oz |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
NXP / Freescale |
A2I20H060NR1 | RF Amplifier A2I20H060N/FM15F///REEL 13 Q2 DP | |
| A2I20H080NR1 | RF Amplifier A2I20H080N/FM15F///REEL 13 Q2 DP | ||
| A2I20H080GNR1 | RF Amplifier A2I20H080GN/FM15F///REEL 13 Q2 DP | ||
| A2I20H060GNR1 | RF Amplifier Airfast RF LDMOS Wideband Integrated Power Amplifier, 1805-2170 MHz, 12 W Avg., 28 V | ||
NXP Semiconductors |
A2I20H060GNR1 | RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V | |
| A2I20H060NR1 | RF Amplifier AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG, 28 V | ||
| A2I20H080GNR1 | RF Amplifier AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS 1800-2200 MHz, 12.5 W AVG, 28 V | ||
| A2I20H080NR1 | AIRFAST RF LDMOS WIDEBAND INTEGR | ||
| A2I20H060N: | Nuevo y original | ||
| A2I20H080N | Nuevo y original | ||
| A2I20H080NQQ1633J | Nuevo y original |