A1C15

A1C15S12M3 vs A1C15S12M3-F

 
PartNumberA1C15S12M3A1C15S12M3-F
DescriptionIGBT Modules PTD HIGH VOLTAGEIGBT Modules PTD HIGH VOLTAGE
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryIGBT ModulesIGBT Modules
RoHSYY
TechnologySiSi
ProductIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationConverter Inverter BrakeConverter Inverter Brake
Collector Emitter Voltage VCEO Max1200 V1200 V
Collector Emitter Saturation Voltage1.95 V1.95 V
Continuous Collector Current at 25 C15 A15 A
Gate Emitter Leakage Current500 nA500 nA
Pd Power Dissipation142.8 W142.8 W
Package / CaseACEPACK1ACEPACK1
Minimum Operating Temperature- 40 C- 40 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesA1C15S12M3A1C15S12M3-F
BrandSTMicroelectronicsSTMicroelectronics
Mounting StyleThrough HolePress Fit
Maximum Gate Emitter Voltage20 V20 V
Product TypeIGBT ModulesIGBT Modules
Factory Pack Quantity1818
SubcategoryIGBTsIGBTs
TradenameACEPACKACEPACK
Fabricante Parte # Descripción RFQ
STMicroelectronics
STMicroelectronics
A1C15S12M3 IGBT Modules PTD HIGH VOLTAGE
A1C15S12M3-F IGBT Modules PTD HIGH VOLTAGE
A1C15S12M3 IGBT TRENCH 1200V 15A ACEPACK1
A1C15S12M3-F IGBT TRENCH 1200V 15A ACEPACK1
A1C1526-0CS-CS568J6 Nuevo y original
A1C153M Nuevo y original
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