 | |  | |
| PartNumber | 71V416S10YG | 71V416S10YG8 | 71V416S10YGI |
| Description | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |
| Manufacturer | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | - |
| Product Category | SRAM | SRAM | - |
| RoHS | Y | Y | - |
| Memory Size | 4 Mbit | 4 Mbit | - |
| Organization | 256 k x 16 | 256 k x 16 | - |
| Access Time | 10 ns | 10 ns | - |
| Interface Type | Parallel | Parallel | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Voltage Min | 3 V | 3 V | - |
| Supply Current Max | 200 mA | 200 mA | - |
| Minimum Operating Temperature | 0 C | 0 C | - |
| Maximum Operating Temperature | + 70 C | + 70 C | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOJ-44 | SOJ-44 | - |
| Packaging | Tube | Reel | - |
| Height | 2.9 mm | 2.9 mm | - |
| Length | 28.6 mm | 28.6 mm | - |
| Memory Type | SDR | SDR | - |
| Series | 71V416S10 | 71V416S10 | - |
| Type | Asynchronous | Asynchronous | - |
| Width | 10.2 mm | 10.2 mm | - |
| Brand | IDT | IDT | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | SRAM | SRAM | - |
| Factory Pack Quantity | 16 | 500 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| Part # Aliases | 71V416 IDT71V416S10YG | 71V416 IDT71V416S10YG8 | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
IDT |
71V416S10YG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | |
| 71V416S10YG8 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10YGI | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10YGI8 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10YG8 | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM | ||
| 71V416S10YG | SRAM 256Kx16 ASYNCHRONOUS 3.3V CMOS SRAM |