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2V7002W

2V7002WT1G vs 2V7002WT1G-CUT TAPE vs 2V7002W

 
PartNumber2V7002WT1G2V7002WT1G-CUT TAPE2V7002W
DescriptionMOSFET NFET 60V 115MA 7OHM
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSC-70-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current310 mA--
Rds On Drain Source Resistance1.33 Ohms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge700 pC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation280 mW--
ConfigurationSingle-Single
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel-Reel
Series2N7002W-2N7002W
Transistor Type1 N-Channel-1 N-Channel
BrandON Semiconductor--
Forward Transconductance Min530 mS--
Fall Time29 ns-29 ns
Product TypeMOSFET--
Rise Time9 ns-9 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time55.8 ns-55.8 ns
Typical Turn On Delay Time12.2 ns-12.2 ns
Unit Weight0.000219 oz-0.000219 oz
Package Case--SC-70-3
Pd Power Dissipation--280 mW
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--310 mA
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--2.5 V
Rds On Drain Source Resistance--1.33 Ohms
Qg Gate Charge--0.7 nC
Forward Transconductance Min--530 mS
Fabricante Parte # Descripción RFQ
2V7002WT1G MOSFET NFET 60V 115MA 7OHM
2V7002WT1G-CUT TAPE Nuevo y original
2V7002W Nuevo y original
ON Semiconductor
ON Semiconductor 		2V7002WT1G MOSFET N-CH 60V 310MA SC70-3
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