2SK4177

2SK4177-DL-1E vs 2SK4177-DL-E vs 2SK4177-E

 
PartNumber2SK4177-DL-1E2SK4177-DL-E2SK4177-E
DescriptionMOSFET NCH 2A 1500V 13OHMS TO263RF Bipolar Transistors MOSFET POWER MOSFETMOSFET N-CH 1500V 2A D2PAK
ManufacturerON SemiconductorSANYO-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-263-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.5 kV--
Id Continuous Drain Current2 A--
Rds On Drain Source Resistance10 Ohms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge37.5 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation80 W--
ConfigurationSingleSingle-
PackagingReelReel-
Series2SK4177--
Transistor Type1 N-Channel1 N-Channel-
BrandON Semiconductor--
Fall Time59 ns--
Product TypeMOSFET--
Rise Time37 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time152 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.139332 oz0.139332 oz-
Package Case-TO-252-3-
Pd Power Dissipation-1.65 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-2 A-
Vds Drain Source Breakdown Voltage-1500 V-
Rds On Drain Source Resistance-13 Ohms-
Fabricante Parte # Descripción RFQ
2SK4177-DL-1E MOSFET NCH 2A 1500V 13OHMS TO263
ON Semiconductor
ON Semiconductor
2SK4177-DL-1E IGBT Transistors MOSFET NCH 2A 1500V 13OHMS TO263
2SK4177-DL-E RF Bipolar Transistors MOSFET POWER MOSFET
2SK4177-E MOSFET N-CH 1500V 2A D2PAK
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