2SC5964-T

2SC5964-TD-E vs 2SC5964-TD-H vs 2SC5964-TD-E , RF2363TR7

 
PartNumber2SC5964-TD-E2SC5964-TD-H2SC5964-TD-E , RF2363TR7
DescriptionBipolar Transistors - BJT HIGH-CURRENT SWITCHINGBipolar Transistors - BJT BIP NPN 3A 50V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePCP-3SOT-89-3-
Transistor PolarityNPN, PNPNPN, PNP-
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 50 V, 50 V50 V-
Collector Base Voltage VCBO- 50 V, 100 V--
Emitter Base Voltage VEBO- 6 V, 6 V6 V-
Collector Emitter Saturation Voltage- 125 mV, 100 mV--
Gain Bandwidth Product fT390 MHz, 380 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2SC59642SC5964-
DC Current Gain hFE Max560--
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current-3 A, 3 A3 A-
DC Collector/Base Gain hfe Min200200-
Pd Power Dissipation3.5 W1.3 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight-0.004603 oz-
Fabricante Parte # Descripción RFQ
2SC5964-TD-E Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
2SC5964-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-TD-E , RF2363TR7 Nuevo y original
ON Semiconductor
ON Semiconductor
2SC5964-TD-H Bipolar Transistors - BJT BIP NPN 3A 50V
2SC5964-TD-E Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
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