 | |  | |
| PartNumber | 2SC5415AE-TD-E | 2SC5415AF-TD-E | 2SC5415F-MEG-TD-E |
| Description | Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR | Bipolar Transistors - BJT BIP NPN 100MA 12V FT=6. | |
| Manufacturer | ON Semiconductor | ON Semiconductor | SANYO |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | IC Chips |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | Through Hole | - |
| Package / Case | PCP-3 | SOT-89-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 12 V | 12 V | - |
| Emitter Base Voltage VEBO | 2 V | 2 V | - |
| Maximum DC Collector Current | 1 uA | - | - |
| Gain Bandwidth Product fT | 6.7 GHz | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SC5415A | 2SC5415A | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 90 | 70 | - |
| Pd Power Dissipation | 800 mW | 800 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001804 oz | 0.004603 oz | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| 2SC5415AE-TD-E | Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR | ||
| 2SC5415AF-TD-E | Bipolar Transistors - BJT BIP NPN 100MA 12V FT=6. | ||
| 2SC5415F-MEG-TD-E | Nuevo y original | ||
ON Semiconductor |
2SC5415AF-TD-E | Bipolar Transistors - BJT BIP NPN 100MA 12V FT=6.7G | |
| 2SC5415AE-TD-E | Bipolar Transistors - BJT ULAHIGH-FREQUENCY TRANSISTOR |