 | |  | |
| PartNumber | 2SC5551AE-TD-E | 2SC5551AF-TD-E | 2SC5549T6F(J-ND |
| Description | Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz | RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | RF Bipolar Transistors | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PCP-3 | PCP-3 | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 30 V | 30 V | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 2 V | 2 V | - |
| Collector Emitter Saturation Voltage | 0.3 V | - | - |
| Maximum DC Collector Current | 300 mA | - | - |
| Gain Bandwidth Product fT | 3.5 GHz | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | 2SC5551A | 2SC5551A | - |
| DC Current Gain hFE Max | 270 | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Continuous Collector Current | 300 mA | 300 mA | - |
| Pd Power Dissipation | 1.3 W | 1.3 W | - |
| Product Type | BJTs - Bipolar Transistors | RF Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Unit Weight | 0.001804 oz | 0.001804 oz | - |
| Transistor Type | - | Bipolar | - |
| Technology | - | Si | - |
| DC Collector/Base Gain hfe Min | - | 90 | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
| 2SC5569-TD-E | Bipolar Transistors - BJT BIP NPN 7A 50V | ||
| 2SC5551AE-TD-E | Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz | ||
| 2SC5585TL | Bipolar Transistors - BJT NPN 12V 0.5A SOT-416 | ||
| 2SC5566-TD-E | Bipolar Transistors - BJT BIP NPN 4A 50V | ||
| 2SC5551AF-TD-E | RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz | ||
| 2SC5585TL | TRANS NPN 12V 0.5A SOT-416 | ||
| 2SC5551AF-TD-E/2SC5551AE | Nuevo y original | ||
| 2SC5551F-TD-E | - Bulk (Alt: 2SC5551F-TD-E) | ||
| 2SC5551F-TD-E , RD75P , | Nuevo y original | ||
| 2SC5555 | Nuevo y original | ||
| 2SC5556 | Nuevo y original | ||
| 2SC555700L , RD8.2K-T1 , | Nuevo y original | ||
| 2SC556 | Nuevo y original | ||
| 2SC5562 | Nuevo y original | ||
| 2SC5564 | Nuevo y original | ||
| 2SC5564 , RD8.2M-T1B- , | Nuevo y original | ||
| 2SC5565 | Nuevo y original | ||
| 2SC5565-TD-E | GP BJT | ||
| 2SC5566-TD | Nuevo y original | ||
| 2SC5568 | Nuevo y original | ||
| 2SC5569 | Nuevo y original | ||
| 2SC5569-TD , RD8.2SL-T1 | Nuevo y original | ||
| 2SC5569-TD-E , MBR1200 T | Nuevo y original | ||
| 2SC5569-TD-E,UN2218-(TX) | Nuevo y original | ||
| 2SC556B | Nuevo y original | ||
| 2SC5570 | Bipolar Junction Transistor, NPN Type, TO-264AA | ||
| 2SC558100L | Nuevo y original | ||
| 2SC5582 , RD8.2UM-T1 , K | Nuevo y original | ||
| 2SC55820Q1TD | Nuevo y original | ||
| 2SC55820Q1TD,UN221D-(TX) | Nuevo y original | ||
| 2SC55820R1TD | Nuevo y original | ||
| 2SC5583,C5583 | Nuevo y original | ||
| 2SC5583,C5583, | Nuevo y original | ||
| 2SC5584,2SC5584A01KV,C55 | Nuevo y original | ||
| 2SC5584,C5584 | Nuevo y original | ||
| 2SC5584,C5584, | Nuevo y original | ||
| 2SC5585 | Nuevo y original | ||
| 2SC5585 TL , RD82P , JSS | Nuevo y original | ||
| 2SC5585BX | Nuevo y original | ||
| 2SC5585GZTL | Nuevo y original | ||
| 2SC5592 , RD9.1FM , G5S | Nuevo y original | ||
| 2SC5594XP-TL , RD9.1M-T1 | Nuevo y original | ||
| 2SC5594XP-TL-E | Nuevo y original | ||
| 2SC5594XP-TL-E-Q | Nuevo y original | ||
| 2SC5563(Q) | Trans GP BJT NPN 1.5KV 0.02A 3-Pin(3+Tab) TO-220NIS | ||
| 2SC5549T6F(J-ND | Nuevo y original | ||
ON Semiconductor |
2SC5569-TD-E | Bipolar Transistors - BJT BIP NPN 7A 50V | |
| 2SC5551AE-TD-E | Bipolar Transistors - BJT RF Transistors 30V,300mA,fT=3.5GHz | ||
| 2SC5566-TD-E | Bipolar Transistors - BJT BIP NPN 4A 50V | ||
| 2SC5551AF-TD-E | RF Bipolar Transistors RF Transistors 30V,300mA,fT=3.5GHz |