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2SC3902

2SC3902T vs 2SC3902S-TL vs 2SC3902S

 
PartNumber2SC3902T2SC3902S-TL2SC3902S
DescriptionBipolar Transistors - BJT BIP NPN 1.5A 160VBipolar Transistors - BJT BIP NPN 1.5A 160V
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-126ML-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max160 V--
Collector Base Voltage VCBO180 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.2 V-0.13 V
Maximum DC Collector Current1.5 A-1.5 A
Gain Bandwidth Product fT120 MHz-120 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Series2SC3902-2SC3902
DC Current Gain hFE Max400-400
PackagingBulk-Bulk
BrandON Semiconductor--
Pd Power Dissipation10 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity200--
SubcategoryTransistors--
Unit Weight0.014110 oz--
Package Case--TO-225AA, TO-126-3
Mounting Type--Through Hole
Supplier Device Package--TO-126ML
Power Max--1.5W
Transistor Type--NPN
Current Collector Ic Max--1.5A
Voltage Collector Emitter Breakdown Max--160V
DC Current Gain hFE Min Ic Vce--100 @ 100mA, 5V
Vce Saturation Max Ib Ic--450mV @ 50mA, 500mA
Current Collector Cutoff Max--1μA (ICBO)
Frequency Transition--120MHz
Pd Power Dissipation--1.5 W
Collector Emitter Voltage VCEO Max--160 V
Collector Base Voltage VCBO--180 V
Emitter Base Voltage VEBO--6 V
Continuous Collector Current--1.5 A
DC Collector Base Gain hfe Min--100
Fabricante Parte # Descripción RFQ
ON Semiconductor
ON Semiconductor 		2SC3902T Bipolar Transistors - BJT BIP NPN 1.5A 160V
2SC3902S Bipolar Transistors - BJT BIP NPN 1.5A 160V
2SC3902T Bipolar Transistors - BJT BIP NPN 1.5A 160V
2SC3902S-TL Nuevo y original
2SC3902T-TL Nuevo y original
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