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| PartNumber | 2SB1189T100Q | 2SB1189T100Q,TLZ27B-GS08 | 2SB1189T100Q/R |
| Description | Bipolar Transistors - BJT PNP 80V 0.7A | ||
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 80 V | - | - |
| Collector Base Voltage VCBO | - 80 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Maximum DC Collector Current | - 0.7 A | - | - |
| Gain Bandwidth Product fT | 120 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2SB1189 | - | - |
| DC Current Gain hFE Max | 120 at 100 mA, 3 V | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.5 mm | - | - |
| Brand | ROHM Semiconductor | - | - |
| Continuous Collector Current | - 0.7 A | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.004603 oz | - | - |