PartNumber | 2SB1182TLR |
Description | Bipolar Transistors - BJT PNP 32V 2A |
Manufacturer | ROHM Semiconductor |
Product Category | Bipolar Transistors - BJT |
RoHS | Y |
Mounting Style | SMD/SMT |
Transistor Polarity | PNP |
Configuration | Single |
Collector Emitter Voltage VCEO Max | 32 V |
Collector Base Voltage VCBO | - 32 V |
Emitter Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 2 A |
Gain Bandwidth Product fT | 100 MHz |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Series | 2SB1182 |
DC Current Gain hFE Max | 180 |
Height | 2.3 mm |
Length | 6.5 mm |
Packaging | Reel |
Width | 5.5 mm |
Brand | ROHM Semiconductor |
Continuous Collector Current | - 2 A |
DC Collector/Base Gain hfe Min | 180 |
Pd Power Dissipation | 10000 mW |
Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 |
Subcategory | Transistors |
Unit Weight | 0.009185 oz |